JPH0151070B2 - - Google Patents

Info

Publication number
JPH0151070B2
JPH0151070B2 JP56096887A JP9688781A JPH0151070B2 JP H0151070 B2 JPH0151070 B2 JP H0151070B2 JP 56096887 A JP56096887 A JP 56096887A JP 9688781 A JP9688781 A JP 9688781A JP H0151070 B2 JPH0151070 B2 JP H0151070B2
Authority
JP
Japan
Prior art keywords
transistor
input
semiconductor device
contact portion
protection transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56096887A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57211272A (en
Inventor
Kenji Minami
Masaru Katagiri
Hideo Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56096887A priority Critical patent/JPS57211272A/ja
Priority to US06/354,397 priority patent/US4509067A/en
Publication of JPS57211272A publication Critical patent/JPS57211272A/ja
Publication of JPH0151070B2 publication Critical patent/JPH0151070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP56096887A 1981-06-23 1981-06-23 Semiconductor device Granted JPS57211272A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56096887A JPS57211272A (en) 1981-06-23 1981-06-23 Semiconductor device
US06/354,397 US4509067A (en) 1981-06-23 1982-03-03 Semiconductor integrated circuit devices with protective means against overvoltages

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56096887A JPS57211272A (en) 1981-06-23 1981-06-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57211272A JPS57211272A (en) 1982-12-25
JPH0151070B2 true JPH0151070B2 (en]) 1989-11-01

Family

ID=14176897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56096887A Granted JPS57211272A (en) 1981-06-23 1981-06-23 Semiconductor device

Country Status (2)

Country Link
US (1) US4509067A (en])
JP (1) JPS57211272A (en])

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1211141B (it) * 1981-12-04 1989-09-29 Ates Componenti Elettron Circuito limitatore-trasduttore disegnali in alternata codificati in forma binaria, come stadio d'ingresso di un circuito integrato a igfet.
JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
JPH0646662B2 (ja) * 1983-12-26 1994-06-15 株式会社日立製作所 半導体装置
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JPS60211866A (ja) * 1984-04-05 1985-10-24 Mitsubishi Electric Corp 半導体集積回路
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
JPS6132464A (ja) * 1984-07-24 1986-02-15 Nec Corp Ｃｍｏｓ型集積回路装置
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
DE218685T1 (de) * 1985-04-08 1988-05-19 Sgs Semiconductor Corp., Phoenix, Ariz. Vor elektrostatischen entladungen geschuetzte eingangsschaltung.
US4806999A (en) * 1985-09-30 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Area efficient input protection
JPS62122272A (ja) * 1985-11-22 1987-06-03 Toshiba Corp 半導体装置
US5257095A (en) * 1985-12-04 1993-10-26 Advanced Micro Devices, Inc. Common geometry high voltage tolerant long channel and high speed short channel field effect transistors
US4808861A (en) * 1986-08-29 1989-02-28 Texas Instruments Incorporated Integrated circuit to reduce switching noise
US4789793A (en) * 1987-02-24 1988-12-06 Texas Instruments Incorporated Integrated FET circuit to reduce switching noise
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
DE3882892D1 (de) * 1987-10-29 1993-09-09 Itt Ind Gmbh Deutsche Schutzanordnung fuer mos-schaltungen.
US4882610A (en) * 1987-10-29 1989-11-21 Deutsche Itt Industries Gmbh Protective arrangement for MOS circuits
US4959708A (en) * 1988-08-26 1990-09-25 Delco Electronics Corporation MOS integrated circuit with vertical shield
KR920007171A (ko) * 1990-09-05 1992-04-28 김광호 고신뢰성 반도체장치
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5733794A (en) * 1995-02-06 1998-03-31 Motorola, Inc. Process for forming a semiconductor device with ESD protection
KR0145476B1 (ko) * 1995-04-06 1998-08-17 김광호 칩면적을 줄일 수 있는 패드구조를 가지는 반도체 메모리 장치
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
US5714785A (en) * 1996-01-16 1998-02-03 Vlsi Technology, Inc. Asymmetric drain/source layout for robust electrostatic discharge protection
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
JPH11214627A (ja) * 1998-01-21 1999-08-06 Mitsubishi Electric Corp Ｅｓｄ保護素子及びその製造方法
US6696341B1 (en) 1998-01-21 2004-02-24 Renesas Technology Corp. Method of manufacturing a semiconductor device having electrostatic discharge protection element
JP6693885B2 (ja) * 2014-11-20 2020-05-13 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942468B2 (ja) * 1976-07-14 1984-10-15 日本電気株式会社 集積回路装置
JPS54116887A (en) * 1978-03-02 1979-09-11 Nec Corp Mos type semiconductor device
JPS54136278A (en) * 1978-04-14 1979-10-23 Nec Corp Semiconductor device
JPS54140480A (en) * 1978-04-24 1979-10-31 Hitachi Ltd Semiconductor device
JPS55127055A (en) * 1979-03-15 1980-10-01 Nec Corp Manufacture of semiconductor device
US4394674A (en) * 1979-10-09 1983-07-19 Nippon Electric Co., Ltd. Insulated gate field effect transistor
JPS6048106B2 (ja) * 1979-12-24 1985-10-25 富士通株式会社 半導体集積回路

Also Published As

Publication number Publication date
JPS57211272A (en) 1982-12-25
US4509067A (en) 1985-04-02

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